2SC2899 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2899

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC2899

Silicon NPN Triple Diffused

Application

High speed and high voltage switching

Outline

TO-126 MOD

123

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

1. Emitter

2. Collector

3. Base

Ratings

Unit

500

V

400

V

10

V

0.5

A

1.0

A

0.75

W

10

W

150

°C

–55 to +150

°C

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