C2517 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
C2517 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2517
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=3.0A ; IB=0;L=1mH
100
V
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
0.6
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=3A; IB=0.3A
VCB=100V ;IE=0
VCE=100V; VBE=-1.5V
Ta=125℃
VEB=10V ;IC=0
1.5
V
10 μA
10 μA
1
mA
10 μA
hFE-1
DC current gain
IC=0.2 A ; VCE=5V
40
固IN电C半H导AN体GE SEMICONDUCTOR hFE-2
DC current gain
Switching times
ton
Turn-on time
ts
Storage time
IC=2 A ; VCE=5V
IC=3A; IB1=-IB2=0.3A
RL=17Ω; VCC=50V
40
200
0.5
2.5
μs
μs
tf
Fall time
0.5 μs
hFE-2 Classifications
M
L
40-80
60-120
K
100-200
2
Share Link: 