C2517 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
C2517 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2517
DESCRIPTION
·
·With TO-220C package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·Switching regulators
·DC-DC converters
·High frequency power amplifiers
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
固IN电C半H导AN体GE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VALUE
150
100
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
12
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2.5
A
PT
Total power dissipation
Ta=25℃
TC=25℃
1.5
W
30
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Share Link: 