2SC1881K Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC1881K

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

Typical Output Characteristics

4

TC = 25°C

3

4.0

3.0

2.0

1.5

2

1.0

1

IB = 0.5 mA

0

1

2

3

4

Collector to emitter voltage VCE (V)

2SC1881(K)

3,000

DC Current Transfer Ratio

vs. Collector Current

TC = 80°C

1,000

25°C

–30°C

300

VCE = 1.5 V

Pulse Test

100

0.1

0.3

1.0

3

Collector current IC (A)

Collector to Emitter Saturation Voltage

vs. Collector Current

5

3

TC = 25°C

Pulse Test

IC / IB = 200

1.0

100

0.5

0.3

0.3 0.5

1.0

3

5

Collector current IC (A)

3

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