2SC1881K Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC1881K

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC1881(K)

Silicon NPN Triple Diffused

Application

High gain amplifier power switching

Outline

TO-220AB

2

1

23

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

1

6.8 kΩ

(Typ)

400 Ω

(Typ)

3

Ratings

Unit

60

V

60

V

7

V

3

A

6

A

30

W

150

°C

–55 to +150

°C

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