2SB852 Просмотр технического описания (PDF) - TY Semiconductor
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2SB852 Datasheet PDF : 2 Pages
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■ Typlacl Characteristics
Product specification
2SB852
125
100
75
50
25
0
0
25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation curves
−500 VCE= −6V
−200
−100
−50
−20
−10
−5
−2
0
−0.4 −0.8
−1.2 −1.6 −2.0 −2.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristisc
−100
−10µA
−9µA
Ta=25°C
−80
−8µA
−7µA
−60
−6µA
−5µA
−40
−4µA
−3µA
−20
−2µA
0
IB=0
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Ground emitter output characteristics
100000
Ta=25°C
50000
20000
−5V
10000
5000
2000
VCE= −3V
1000
500
200
100
−2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
VCE= −5V
50000
Ta=100°C
20000
25°C
10000
5000
−55°C
2000
1000
500
−5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
−20
IC/IB=500
−10
−5
−2
−1
Ta= −55°C
−0.5
25°C 100°C
−0.2
−0.1
−5
−10 −20
−50 −100 −200 −500 −1000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25°C
10000
VCE= −5V
5000
2000
1000
500
200
100
50
12
5 10 20
50 100 200
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
100
Ta=25°C
f=1MHz
50
IE=0A
20
10
5
2
1
−1 −2
−5 −10 −20
−50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
20
Ta=25°C
f=1MHz
10
IE=0A
5
2
1
−1
−2
−5
−10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
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