2SB852 Просмотр технического описания (PDF) - TY Semiconductor

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2SB852

High-gain Amplifier Transistor

TY Semiconductor 

■ Features

● Darlington connection for high DC current gain.

● Built-in 4kΩ resistor between base and emitter.

C

B

RBE 4kΩ

E

Product specification

2SB852

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

Unit: mm

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

0.1+0.05

-0.01

1 Base

2 Emitter

3 Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation(TOTAL)

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Rating

-40

-32

-6

-300

200

150

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-to-base breakdown voltage

Collector-to-emitter breakdown voltage

Emitter-to-base breakdown voltage

Collector cutoff current

Collector cutoff current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Symbol

Test conditions

V(BR)CBO Ic= -100μA, IE=0

V(BR)CEO Ic= -1 mA， IB=0

V(BR)EBO IE= -100 μA， IC=0

IcBO VCB= -24 V , IE=0

IEBO VCE= -4.5V , IC=0

hFE VCE= -5V, IC= -100mA

VCE(sat) IC=-200 mA, IB= -0.4mA

fT VCE= -5V, IC= -10mA,f=100MHz

Cob VCB=-10V, IE=0A, f=1MHz

■ Marking

Marking

U*

Unit

V

V

V

mA

mW

℃

℃

Min Typ Max Unit

-40

V

-32

V

-6

V

-1 μA

-1 μA

5000

-1.5 V

200

MHz

3

PF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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