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2SB695

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SB695

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0

-120

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-170

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB=B -0.5A

-1.5 V

VBE(on) Base -Emitter On Voltage

IC= -1A; VCE= -5V

-1.5 V

ICBO

IEBO

hFE-1

hFE-2

www.iscsemi.cn Collector Cutoff Current

VCB= -170V; IE=0

Emitter Cutoff Current

VEB= -5V; IC=0

DC Current Gain

IC= -1A; VCE= -5V

40

DC Current Gain

IC= -5A; VCE= -5V

20

-50 μA

-50 μA

200

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

350

pF

fT

Current-Gain—Bandwidth Product

IC=-1A; VCE= -5V

7

MHz

isc Website：www.iscsemi.cn

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