2SB695 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SB695 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB695
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD731
APPLICATIONS
·Designed for power amplifier and general purpose
www.iscsemi.cn applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-170
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
-7
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
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