2SB1032 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SB1032 Datasheet PDF : 6 Pages
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Maximum Collector Dissipation Curve
100
80
60
40
20
0
50
100
150
Case Temperature TC (°C)
Typical Output Characteristics
–10
–1.5
–1.0
Pc
–0.9
=
80
W
–8
–0.8
–0.7
–6
–0.6
–0.5
–4
–0.4
–2
TC = 25°C
IB = 0 mA
0
–2
–4
–6
–8 –10
Collector to emitter Voltage VCE (V)
2SB1032(K)
Area of Safe Operation
–30
iC (peak)
1 µs
–10
IC (max)
–3
–1.0
–0.3
–0.1
–0.03
–3
Ta = 25°C
1 Shot pulse
–10
–30
–100 –300
Collector to emitter Voltage VCE (V)
30,000
10,000
3,000
1,000
DC Current Transfer Ratio vs.
Collector Current
Ta =2–572°5C5°C°C
VCE = –3 V
Pulse
300
100
30
–0.3
–1.0
–3
–10
–30
Collector current IC (A)
3
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