2SB1032(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
ID*1
PC * 1
Tj
Tstg
Rating
Unit
–120
V
–120
V
–7
V
–10
A
–15
A
10
A
80
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO –120 —
voltage
Emitter to base breakdown
V(BR)EBO
–7
—
voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note: 1. Pulse test
I CBO
I CEO
hFE
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VD
t on
t off
—
—
—
—
1000 —
—
—
—
—
—
—
—
—
—
—
—
0.8
—
4.0
Max Unit
—
V
—
V
–100 µA
–10 µA
20000
–1.5 V
–3.0 V
–2.0 V
–3.5 V
3.0 V
—
µs
—
µs
Test conditions
IC = –25 mA, RBE = ∞
IE = –200 mA, IC = 0
VCB = –120 V, IE = 0
VCE = –100 V, RBE = ∞
VCE = –3 V, IC = –5 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
IC = –5 A, IB = –10 mA*1
IC = –10 A, IB = –0.1 A*1
ID = 10 A*1
VCC = –30 V,
IC = –5 A, IB1 = –IB2 = –10 mA
2