2SA1389 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

2SA1389

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ;IB=B 0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA; IC=0

VCEsat Collector-emitter saturation voltage IC=-5A;IB=-0.5A

VBE

Base-emitter voltage

IC=-5A;VCE=-5V

ICBO

Collector cut-off current

VCB=-160V; IE=0

ICEO

Collector cut-off current

VCE=-160V; IB=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-7A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-10V

Product Specification

2SA1389

MIN TYP. MAX UNIT

-160

V

-7

V

-1.8

V

-1.7

V

-50 μA

-1

mA

-50 μA

60

200

40

30

MHz

2

Share Link: