2SA1389 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SA1389 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1389
DESCRIPTION
·With MT-200 package
·Fast switching speed
·Excellent safe operating area
APPLICATIONS
·High frequency power amplifiers
·Audio power amplifiers
·Switching regulators
·DC-DC converters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-160
-160
-7
-12
120
150
-55~150
UNIT
V
V
V
A
W
℃
℃
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