2SA1191 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

2SA1191

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1190, 2SA1191

1,000

DC Current Transfer Ratio vs.

Collector Current

Ta = 75°C

300

–25

25

100

30

10

–1

VCE = –12 V

Pulse

–3

–10 –30

Collector Current IC (mA)

–100

Base to Emitter Saturation Voltage vs.

Collector Current

–10

IC = 10 IB

Pulse

–3

25

–1.0

Ta = –25°C

75

–0.3

–0.1

–1

–3

–10 –30

Collector Current IC (mA)

–100

Collector to Emitter Saturation Voltage vs.

Collector Current

–1.0

IC = 10 IB

Pulse

–0.3

–0.1

–0.03

Ta = 75°C

–25

25

–0.01

–1

–3

–10 –30

Collector Current IC (mA)

–100

1,000

500

Gain Bandwidth Product vs.

Collector Current

VCE = –6 V

200

100

50

20

10

–0.5 –1.0 –2

–5 –10 –20 –50

Collector Current IC (mA)

6

Share Link: