2SA1191 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SA1191 Datasheet PDF : 10 Pages
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2SA1190, 2SA1191
Electrical Characteristics (Ta = 25°C)
2SA1190
2SA1191
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–90 —
—
–120 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–90 —
—
–120 —
—V
IC = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—V
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
I CBO
I EBO
hFE*1
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
VCE(sat)
VBE(sat)
——
——
250 —
–0.1 — —
–0.1 — —
800 250 —
–0.1 µA
–0.1 µA
800
— –0.05 –0.15 — –0.05 –0.15 V
— –0.7 –1.0 — –0.7 –1.0 V
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V,
IC = –2 mA*2
IC = –10 mA,
IB = –1 mA*2
Gain bandwidth product fT
Collector output
Cob
capacitance
— 130 — — 130 — MHz VCE = –6 V,
IC = –10 mA
— 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Noise figure
NF
— 0.15 1.5 — 0.15 1.5 dB VCE = –6 V,
IC = –0.1 mA,
Rg = 10 kΩ
f = 1 kHz
— 0.2 2.0 — 0.2 2.0 dB VCE = –6 V,
IC = –0.1 mA,
Rg = 10 kΩ
f = 10 Hz
Noise voltage reffered en
to input
— 0.7 — — 0.7 — nV/ VCB = –6 V,
√Hz IC = –10 mA,
Rg = 0, f = 1 kHz
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.
2. Pulse test
D
E
250 to 500 400 to 800
3
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