2N6786 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2N6786 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS at Tc = 25'C (Unless Otherwise Sptclfltd)
CHARACTERISTIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Forward
Gate-Source Leakage Reverse
Zero-Gate Voltage Drain Current
On-State Voltage*
Static Drain-Source On-State Resistance*
Diode Forward Voltage*
Forward Transconductance*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Of Delay Time
Fall Time
Safe Operating Area
BVoss
VQ8(th)
loss
loaa
loss
Vos(on)
ros(on)
V8o
gt.
CIM
COM
Cm
td(on)
t,
Woff)
tf
SOA
TEST CONDITIONS
VQS = 0 V, lo = 0.25 mA
VQS ~ Voa, lo = 0.5 mA
Vos - 20 V, VDS = 0 V
Vos = -20 V. Vos - 0 V
Vos = 400 V, Vos = 0 V
Vos = 320 V, Vas = 0 V, Tc = 125°C
Vos = 10V, lo = 1.25A
LIMITS
UNITS
Mln. Typ. Max.
400* — —
2.0* — 4.0*
V
—
—
— 100*
— 100*
nA
— — 250*
— — 1000* M
— — 4.5* V
Vas • 10V, lo = 0.8 A, TA= 25°C — 3.3 3.6* n
VQS = 10 V, ID = 0.8 A, TA = 125° C — — 7.92*
Tc » 25°C, Is = 1.25 A, Vas = 0 V 0.6' — 1.4* V
Vos = 5 V, lo = 0.8 A
0.7* 1.2 2.1* S(U)
Vos = 0 V, VDS * 25 V, f = 1 MHz 60* 135 200*
See Fig. 10
15* 35 50* PF
2* 8 15*
Voo = 170 V, lo =0.8 A, Zo - 50 n — — 15*
See Fig. 15. (MOSFET switching — — 20*
times are essentially independent — — 35*
ns
of operating temperature.)
— — 30*
Vos * 200 V. ID = 75 mA, See Fig. 16. 15 — —
Vos - 12 V, ID= 1.25 A, See Fig. 16. 15 — —
W
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Rgic
R0,A
Free Air Operation
—
—
_— 8.33* °C/W
175
SOURCE-DRAIN DIODE SWITCHING CHARACTERISTICS (TYPICAL)
Reverse Recovery Time
tn
Reverse Recovered Charge
Qnn
Forward Turn-On Time
ton
'JEDEC registered value.
•Pulse Test: Pulse width £ 300 fa, duty cycle < 2%.
Tj=150°C, U=1.25 A, diF/dt=100 A/fia
380
ns
Tj=150°C, lF=1.25 A, diF/dt=100 A/fis
2.7
HC
Intrinsic turn-on time is negligible. Turn-on speed is
substantially controlled by U + Lo.
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