2N6786 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
2N6786 Datasheet PDF : 2 Pages
| |||
IZIIEU <^>£.mi-(-on.a\jickoi Lptoaucti., Una.
CX
J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6786
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
N-Channel Enhancement-Mode
Power MOS Field-Effect Transistor
Description
The 2N6786 is an n-channel enhancement-mode silicon-gate
power MOS field-effect transistor designed for applications such as
switching regulators, switching converters, motor drivers, relay
drivers, and drivers for high-power bipolar switching transistors
requiring high speed and low gate-drive power. This type can be
operated directly from integrated circuits.
The 2N6786 is supplied in the JEDEC TO-205AF (Low Profile
TO-39) metal package.
Features
• 1.25A, 400V
• «t>S(on) = 3-6n
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Absolute Maximum Ratings Oc - +25°C) Unless Otherwise Specified
2N6786
Drain-Source Voltage
Drain-Gate Voltage (RGS = 20kn)
Continuous Drain Current
TC = +25°C
TC = +100°C
Pulsed Drain Current
Gate-Source Voltage
Continuous Source Current
Pulse Source Current
Maximum Power Dissipation
TC = +25°C (See Figure 14)
Above TC = +25°C, Derate Linearly (See Figure 14)
Inductive Current, Clamped
(L=100p.H)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
(0.063" (1.6mm) from case for 10s)
VDS
VDGR
'D
'D
'DM
VGS
'S
'SM
PD
'LM
Tj, TSTG
TL
400*
400*
1.25*
0.8*
5.5*
±20*
1.25*
5.5*
15*
0.12*
5.5
-55 to +150*
300*
UNITS
V
V
A
A
A
V
A
A
W
W/QC
A
°C
oc
N.I .Semi-Conductors reserves the right to change lest conditions, parameter limit* :md packuge Jimensions without notice
Information turrmhtd by NJ Semi-t unductors h believed to he both accurate and reliable .it the time of going to press. However S I
Semi-<_ oiuluclors .b.Miincs no responsibility tor my errors >>r omission* discovered in its H.-.C NJ Semi-Cnmlin.ti.
n;fiHUTS rn vcrit\h 11 iliilivjhivn iw i nrrt'nt h<ftire Dlntiim
Share Link: 