2N6784 Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N6784 Datasheet PDF : 7 Pages
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2N6784
Typical Performance Curves Unless Otherwise Specified (Continued)
10
PULSE TEST = 80µs
8
10V
9V
6
8V
4
7V
2
VGS = 6V
4.0V
5V
0
0
2
4
6
8
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
4
80µs PULSE TEST
3
VGS = 10V
2
1
VGS = 20V
0
0
2
4
6
8
10
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
10 80µs PULSE TEST
5
2
1.0
0.5
TJ = -55oC
TJ = 25oC
TJ = 125oC
0.2
0.1
0
2
4
6
8
10
12
14
VSD, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2
VGS = 10V, ID = 1.25A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400 CRSS = CGD
COSS = CDS + CGD
300
200
CISS
100
COSS
CRSS
00
10
20
30
40
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B
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