2N6784 Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N6784 Datasheet PDF : 7 Pages
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2N6784
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
2N6784
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain
TC = 100oC . .
Current
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. ID
..
2.25
1.5
A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
9
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
2.25
A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
9
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
W
0.12
W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-55 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Diode Forward Voltage
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV DSS
VGS(TH)
IDSS
VDS(ON)
IGSS
r DS(ON)
V SD
gfs
td(ON)
tr
td(OFF)
tf
CISS
COSS
C RSS
RθJC
R θ JA
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 0.5mA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TC = 125oC
ID = 2.25A, VGS = 10V
VGS = ±20V
ID = 1.5A, VGS = 10V, TA = 25oC
ID = 1.5A, VGS = 10V, TA = 125oC
IS = 2.25A, VGS = 0V
VDS = 5V, ID = 1.5A
VDD ≅ 75V, ID = 1.5A, RG = 50Ω
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)
Free Air Operation
200
-
-
V
2
-
4
V
-
-
250
µA
-
-
1000 µA
-
-
3.37
V
-
-
±100 nA
-
1.0 1.500
Ω
-
-
2.81
Ω
0.7
-
1.5
V
0.9
1.3
2.7
S
-
-
15
ns
-
-
20
ns
-
-
30
ns
-
-
20
ns
60 135 200
pF
20
60
80
pF
5
16
25
pF
-
-
8.33 oC/W
-
-
175 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Reverse Recovery Time
Reverse Recovered Charge
trr
Q RR
TJ = 150oC, ISD = 2.25A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 2.25A, dISD/dt = 100A/µs
-
290
-
-
2.0
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedance curve (Figure 3).
UNITS
ns
µC
©2001 Fairchild Semiconductor Corporation
2N6784 Rev. B
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