2SK2933 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2933 Datasheet PDF : 10 Pages
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2SK2933
Body–Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200
VGS = 0, Ta = 25 °C
100
50
20
10
5
0.1 0.2 0.5 1 2 5 10 20
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50
Crss
20 VGS = 0
10 f = 1 MHz
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
I D = 15A
80
VDS
60
40
16
VGS
12
V DD = 10 V
25 V
50 V 8
20
V DD = 50 V
4
25 V
10 V
0
0
8
16 24 32 400
Gate Charge Qg (nc)
1000
Switching Characteristics
300
t d(off)
100
30
tf
tr
t d(on)
10
3
1
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.5 1 2 5 10 20
Drain Current I D (A)
6
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