2SK2933 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2933

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2933

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 0.040Ω typ.

• 4V gate drive devices.

• High speed switching

Outline

TO–220CFM

ADE-208-556B (Z)

3rd. Edition

Jun 1998

D

G

123

1. Gate

2. Drain

3. Source

S

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