2SK2085 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2085 Datasheet PDF : 9 Pages
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2SK2085
Body to Drain Diode Reverse
Recovery Time
200
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
100
50
20
10
0.02 0.05 0.1 0.2 0.5 1 2
Reverse Drain Current I DR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
VGS = 0
f = 1 MHz
1
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
200
20
160
V DD = 25 V
50 V
120
80 V
VDS
80
VGS
16
I D= 1 A
12
8
40
V DD = 25 V
4
50 V
80 V
0
0
2
8
6
8
10
Gate Charge Qg (nc)
Switching Characteristics
200
100
50
VGS = 10 V
20
V DD = 30 V
PW = 2 µs
duty < 1 %
10
t d(off)
tf
t d(on)
5
tr
2
0.02 0.05 0.1 0.2 0.5 1 2
Drain Current I D (A)
6
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