2SK2373 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK2373 Datasheet PDF : 7 Pages
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2SK2373
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.4
0.3
0.2
0.2 A
0.1
0.1 A
I D = 0.05 A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Ta = 25 °C
5 Pulse Test
2
VGS = 4 V
1
10 V
0.5
0.2
0.1
0.01 0.02 0.05 0.1 0.2
0.5 1
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
1
0.5
Ta = –25 °C
0.2
75 °C
0.1
25 °C
0.05
0.02
0.01
0.01 0.02
V DS = 10 V
Pulse Test
0.05 0.1 0.2 0.5 1
Drain Current I D (A)
Typical Capacitance vs.
Drain to Source Voltage
100
30
Coss
10
Ciss
3
Crss
1
0.3
0.1
0
VGS = 0
f = 1 MHz
10 20 30 40 50
Drain to Source Voltage V DS (V)
4
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