2SK2373 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

2SK2373

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2373

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %

2. Marking is “ZE–”.

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

30

V

±20

V

0.2

A

0.4

A

0.2

A

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

V(BR)DSS

30

—

voltage

Gate to source breakdown

voltage

V(BR)GSS

±20

—

Gate to source leak current IGSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off)

1.0

—

Static drain to source on state RDS(on)

—

1.4

resistance

—

1.0

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Note 1. Pulse Test

t d(on)

—

tr

—

t d(off)

—

tf

—

17.8

25.4

3.7

50

125

660

400

Max

—

—

±2

1

2.0

2.5

1.4

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

Test Conditions

ID = 100 µA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 30 V, VGS = 0

ID = 10 µA, VDS = 5 V

ID = 20 mA

VGS = 4 V*1

ID = 10 mA

VGS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 0.1 A

VGS = 10 V

RL = 100 Ω

PW = 2 µs

2

Share Link: