C004B Просмотр технического описания (PDF) - Toshiba

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C004B

Bipolar Transistors Silicon NPN Epitaxial Type / High collector voltage: VCEO = 160V (min)

Toshiba 

TTC004B

Fig. 7.7 rth - tw

(Guaranteed Maximum)

Fig. 7.8 Safe Operating Area

(Guaranteed Maximum)

Fig. 7.9 PC - Ta

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherwise noted.

4

2013-09-11

Rev.1.0

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