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K7A50D Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
Список матч
K7A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ )
Toshiba
K7A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE 10
8
Tc
=
25°C
PULSE TEST
4
7.25
7
6.75
3
6.5
2
6.25
6
1
VGS
=
5 .5 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
TK7A50D
I
D
– V
DS
10
10
COMMON SOURCE
8
Tc
=
25°C
PULSE TEST
8
7.75
7.5
6
7.25
4
7
6.75
6.5
2
VGS
=
6 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
8
6
4
25
2
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
12
COMMON SOURCE
Tc
=
25°C
10
PULSE TEST
7
8
6
4
3.5
2
ID = 1.8 A
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
10 V
PULSE TEST
Tc
= −
55 °C
1
100
25
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
VGS
=
10, 15 V
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2010-06-03
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