K7A50D Просмотр технического описания (PDF) - Toshiba
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K7A50D Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
TK7A50D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 3.5 A
VDS = 10 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯
⎯
±1
μA
⎯
⎯
10
μA
500 ⎯
⎯
V
2.4
⎯
4.4
V
⎯
1.0 1.22
Ω
0.7 2.5
⎯
S
⎯ 600 ⎯
⎯
4
⎯
pF
⎯
70
⎯
tr
10 V
ID = 3.5 A 出力
⎯
18
⎯
VGS
ton
0V
50 Ω
RL = 57 Ω
⎯
40
⎯
ns
tf
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 μs
⎯
8
⎯
⎯
55
⎯
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 7 A
⎯
12
⎯
⎯
7
⎯
nC
Qgd
⎯
5
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 7 A, VGS = 0 V
IDR = 7 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Marking
Min Typ. Max Unit
⎯
⎯
7
A
⎯
⎯
28
A
⎯
⎯
−1.7
V
⎯ 1200 ⎯
ns
⎯
7
⎯
μC
K7A50D
Note 4: A line under a Lot No. identifies the indication of product
Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to
Lot No.
environmental matters such as the RoHS compatibility of Product.
Note 4
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2
2010-06-03
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