TH58NVG1S3AFT Просмотр технического описания (PDF) - Toshiba

Номер в каталоге

Компоненты Описание

Список матч

TH58NVG1S3AFT

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

AC TEST CONDITIONS

PARAMETER

Input level

Input pulse rise and fall time

Input comparison level

Output data comparison level

Output load

TH58NVG1S3AFT05

CONDITION

2.4 V, 0.4 V

3ns

1.5 V, 1.5 V

1.5 V, 1.5 V

CL (100 pF)  1 TTL

PROGRAMMING AND ERASING CHARACTERISTICS

(Ta 0 to 70℃, VCC 2.7V ~ 3.6V)

SYMBOL

PARAMETER

MIN

tPROG

Average Programming Time



Number of Programming Cycles on Same Page

N



(per 512+16 bytes)

tBERASE Block Erasing Time



(1) Refer to Application Note (12) toward the end of this document.

TYP.

200



2

MAX

700

2

4

UNIT NOTES

Ps

(1)

ms

2003-05-19A 5/32

Share Link: