TH58NVG1S3AFT Просмотр технического описания (PDF) - Toshiba

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TH58NVG1S3AFT

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba 

TH58NVG1S3AFT05

VALID BLOCKS (1)

SYMBOL

PARAMETER

MIN.

TYP.

MAX

UNIT

NVB

Number of Valid Blocks

2008

-

2048

Blocks

(1) The TH58NVG1S3A occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.

(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

VCC

Power Supply Voltage

VIH

High Level input Voltage

VIL

Low Level Input Voltage

* 2 V (pulse width lower than 20 ns)

MIN

2.7

2.0

0.3*

TYP.

3.3





MAX

3.6

VCC  0.3

0.8

UNIT

V

V

V

DC CHARACTERISTICS (Ta 0 to 70℃, VCC 2.7V ~ 3.3 V)

SYMBOL

PARAMETER

CONDITION

MIN

IIL

Input Leakage Current

VIN 0 V to VCC



ILO

Output Leakage Current

VOUT 0 V to VCC



ICCO1

Reading

CE VIL, IOUT 0 mA, tcycle 50 ns



ICCO7

Programming Current





ICCO8

Erasing Current





ICCS1

Standby Current

CE VIH , WP 0V/VCC



ICCS2

Standby Current

CE VCC  0.2 V, WP 0V/VCC



VOH

High Level Output Voltage

Vcc, IOH 400 PA

2.4

VOL

Low Level Output Voltage

Vcc, IOL 2.1 mA



IOL ( RY / BY ) Output current of RY / BY pin VOL 0.4 V



TYP.





10

10

10









8

MAX

r10

r10

30

30

30

1

50



0.4



UNIT

PA

PA

mA

mA

mA

mA

PA

V

V

mA

2003-05-19A 3/32

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