5SMX12L2510 Просмотр технического описания (PDF) - ABB
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5SMX12L2510 Datasheet PDF : 5 Pages
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5SMX 12L2510
IGBT characteristic values 2)
Parameter
Symbol Conditions
Collector (-emitter)
breakdown voltage
V(BR)CES VGE = 0 V, IC = 1 mA, Tvj = 25 °C
Collector-emitter
saturation voltage
Collector cut-off current
Gate leakage current
Gate-emitter threshold voltage
Gate charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Internal gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
VCE sat
ICES
IGES
VGE(TO)
Qge
Cies
Coes
Cres
RGint
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
IC = 50 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
VCE = 2500 V, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
IC = 10 mA, VCE = VGE, Tvj = 25 °C
IC = 50 A, VCE = 1250 V, VGE = -15 ..15 V
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
VCC = 1250 V, IC = 50 A,
RG = 33 Ω, VGE = ±15 V,
Tvj = 25 °C
Tvj = 125 °C
Lσ = 2400 nH,
inductive load
Tvj = 25 °C
Tvj = 125 °C
VCC = 1250 V, IC = 50 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 2400 nH,
inductive load
Tvj = 25 °C
Tvj = 125 °C
Tvj = 25 °C
Tvj = 125 °C
VCC = 1250 V, IC = 50 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 2400 nH,
inductive load,
FWD: ½ 5SLX12L2510
Tvj = 25 °C
Tvj = 125 °C
VCC = 1250 V, IC = 50 A,
VGE = ±15 V, RG = 33 Ω,
Tvj = 25 °C
Lσ = 2400 nH,
inductive load
Tvj = 125 °C
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2000 V, VCEM ≤ 2500 V
2) Characteristic values according to IEC 60747 - 9
min typ max
2500
2.0 2.5 2.9
3.1
100
1000
-500
500
5
7.5
510
7.8
0.4
0.13
5
380
390
255
265
690
790
320
350
28
42
40
50
250
Unit
V
V
V
µA
µA
nA
V
nC
nF
Ω
ns
ns
ns
ns
mJ
mJ
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1622-03 Sep 05
page 2 of 5
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