5SMX12L2510 Просмотр технического описания (PDF) - ABB

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5SMX12L2510

IGBT-Die

ABB 

VCE =

IC

=

2500 V

50 A

IGBT-Die

5SMX 12L2510

Die size: 12.4 x 12.4 mm

• Low loss, rugged SPT technology

• Smooth switching for good EMC

• Large bondable emitter area

• Passivation: SIPOS and Silicon Nitride plus Polyimide

Maximum rated values 1)

Parameter

Symbol Conditions

Collector-emitter voltage

VCES VGE = 0 V

DC collector current

IC

Peak collector current

ICM

Limited by Tvjmax

Gate-emitter voltage

VGES

IGBT short circuit SOA

tpsc

VCC = 2000 V, VCEM ≤ 2500 V

VGE ≤ 15 V, Tvj ≤ 125 °C

Junction temperature

Tvj

1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

Doc. No. 5SYA 1622-03 Sep 05

min max Unit

2500 V

50 A

100 A

-20 20 V

10 µs

-40 125 °C

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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