2SB624 Просмотр технического описания (PDF) - Weitron Technology

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2SB624

PNP Epitaxial Planar Transistors

Weitron Technology 

2SB624

ELECTRICAL CHARACTERISTIC CURVES

250

Free air

200

150

100

50

0

0 25 50 75 100 125 150

TA-Ambient Temperature (˚C)

Fig.1 TOTAL POWER DISSIPATION VS.

AMBIENT TEMPERATURE

-1000

-100

VCE = -6.0V

Pulsed

-10

1

-0.1

-0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1

VBE - Base to Emitter Voltage (V)

Fig.3 COLLECTOR CURRENT VS.

BASE TO EMITTER VOLTAGE

10

IC = 10·IB

Pulsed

-1

-0.1

-0.01

-0.001

-0.1

-1

-10

-100

-1000

IC - Collector Current (mA)

Fig.5 BASE AND COLLECTOR SATURATION

VOLTAGE VS. COLLECTOR CURRENT

-100

-80

-60

-40

-20

-500 -450

-400

-350

-300

-250

-200

-150

-100

IB= -50µA

PT=200mW

0

0

-2

-4

-6

-8

-10

VCE-Collector to Emitter Voltage(V)

Fig.2 COLLECTOR CURRENT VS.

COLLECTOR TO EMITTER VOLTAGE

1000

100

VCE = -1.0V

Pulsed

10

-0.1

-0.1

-1

-10

-100

-1000

IC - Collector Current (mA)

Fig.4 DC CURRENT GAIN VS.

COLLECTOR CURRENT

-1.0

Pulsed

-0.8

-0.6

-0.4

-0.2

0

0.1

-1

-10

-100

IB - Base Current (mA)

Fig.6 COLLECTOR TO EMITTER VOLTAGE

VS. BASE CURRENT

WEITRON

3/4

http://www.weitron.com.tw

16-Aug-05

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