2SB624 Просмотр технического описания (PDF) - Weitron Technology

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2SB624

PNP Epitaxial Planar Transistors

Weitron Technology 

2SB624

ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)

Characteristic

Symbol Min

Typ Max Unit

ON CHARACTERISTICS(1)

DC Current Gain

VCE=-1V, IC =-100mA

VCE=-1V, IC =-700mA

Collector-Emitter Saturation Voltage

IC=-700mA, IB=-70mA

Base-Emitter Voltage

VCE=-6V, IC=-10mA

1. Pulse Test: Pulse Width ≤ 350µs, Duty Cycle ≤ 2%

hFE1

110

-

hFE2

50

-

VCE(sat)

-

-

VBE(on) -0.6

-

400

-

-

-

-0.6 V

-0.7 V

DYNAMIC CHARACTERISTICS

Transition Frequency

VCE=-6V, IC =-10mA

Output Capacitance

VCB=-6V, IE=0, f=1MHz

fT

-

160

- MHz

Cob

-

17

-

pF

CLASSIFICATION OF hFE1

Marking

BV1

Rank

1

hFE1

110-180

BV2

2

135-220

BV3

3

170-270

BV4

4

200-320

BV5

5

250-400

WEITRON

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http://www.weitron.com.tw

16-Aug-05

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