KM41C4000D Просмотр технического описания (PDF) - Samsung
Номер в каталоге
Компоненты Описание
Список матч
KM41C4000D Datasheet PDF : 20 Pages
| |||
KM41C4000D, KM41V4000D
CMOS DRAM
DC AND OPERATING CHARACTERISTICS (Recommend operating conditions unless otherwise noted.)
Symbol
Power
Speed
KM41V4000D
Max
KM41C4000D
Units
-5
-
ICC1
Don′t Care
-6
60
-7
55
85
mA
75
mA
65
mA
ICC2
Don′t Care
Don′t Care
1
2
mA
-5
-
ICC3
Don′t Care
-6
60
-7
55
85
mA
75
mA
65
mA
-5
-
ICC4
Don′t Care
-6
45
-7
40
65
mA
55
mA
45
mA
ICC5
Normal
L
Don′t Care
0.5
100
1
mA
200
uA
-5
-
ICC6
Don′t Care
-6
60
-7
55
85
mA
75
mA
65
mA
ICC7
L
Don′t Care
200
ICCS
L
Don′t Care
150
300
uA
-
uA
ICC1* : Operating Current (RAS and CAS cycling @tRC=min.)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)
ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)
ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)
ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min)
ICC7 : Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,
DQ=Don′t Care, TRC=125us(L-ver.), TRAS=TRASmin~300ns
ICCS : Self refresh current
RAS=CAS=VIL, W=OE =A0 ~ A10=D=VCC-0.2V or 0.2V
*Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1, ICC3 ICC6 and ICC7, address can be changed maximum once while RAS=VIL. In
ICC4, address can be changed maximum once within one fast page mode cycle time, tPC.
Share Link: 