HN29V1G91T-30 Просмотр технического описания (PDF) - Renesas Electronics

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HN29V1G91T-30

128M × 8-bit AG-AND Flash Memory

Renesas Electronics 

HN29V1G91T-30

128M × 8-bit AG-AND Flash Memory

REJ03C0056-0400Z

Rev. 4.00

Jul.20.2004

Description

The HN29V1G91 series achieves a write speed of 10 Mbytes/sec, which is 5 times faster than Renesas's

previous multi level cell Flash memory, using 0.13µm process technology and AG-AND (Assist Gate-

AND) type Flash memory cell using multi level cell technology provides both the most cost effective

solution and high speed programming.

Features

• On-board single power supply: VCC = 2.7 V to 3.6 V

• Operation Temperature range: Ta = 0 to +70°C

• Memory organization

 Memory array: (2048+64) bytes × 16384 page × 4 Bank

 Page size: (2048+64) bytes

 Block size: (2048+64) bytes × 2 page

 Page Register: (2048+64) bytes × 4 Bank

• Multi level memory cell

 2bit/cell

• Automatic program

 Page program

 Multi bank program

 Cache program

 2 page cache program

• Automatic Erase

 Block Erase

 Multi Bank Block Erase

• Access time

 Memory array to register (1st access time): 120 µs max

 Serial access: 35 ns min

Rev.4.00, Jul.20.2004, page 1 of 89

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