HN29V1G91T-30 Просмотр технического описания (PDF) - Renesas Electronics

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HN29V1G91T-30

128M × 8-bit AG-AND Flash Memory

Renesas Electronics 

HN29V1G91T-30

Page Program

Page program operation enables to write the data into one Page address. The data is stored into the data

register after writing 80h command with four address input (Column address, Page address) and data input.

It is also stored serially from column address which is input and then automatic program operation starts

after writing 10h command (Program command). Program operation must be executed to a Page address

which the data is erased. A number of additional program in the same Page address is maximum 8 times.

Rev.4.00, Jun.20.2004, page 15 of 89

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