HM-6508/883 Просмотр технического описания (PDF) - Intersil
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HM-6508/883 Datasheet PDF : 9 Pages
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HM-6508/883
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
Typical Derating Factor . . . . . . . . . . .1.5mA/MHz Increase in ICCOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to +0.8V
Input High Voltage . . . . . . . . . . . . . . . . . . . . . . . .VCC -2.0V to VCC
Input Rise and Fall Time. . . . . . . . . . . . . . . . . . . . . . . . . . 40ns Max.
Thermal Resistance (Typical, Note 1)
θJA
CERDIP Package . . . . . . . . . . . . . . . . 75oC/W
θJC
15oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +175oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
TABLE 1. HM-6508/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS
Device Guaranteed and 100% Tested
PARAMETER
SYMBOL
(NOTE 1)
CONDITIONS
GROUP A
SUBGROUPS
TEMPERATURE
LIMITS
MIN MAX UNITS
Output Low Voltage
VOL
VCC = 4.5V,
IOL = 3.2mA
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
0.4
V
Output High Voltage
VOH
VCC = 4.5V,
IOH = -0.4mA
1, 2, 3
-55oC ≤ TA ≤ +125oC 2.4
-
V
Input Leakage Current
II
VCC = 5.5V,
1, 2, 3
-55oC ≤ TA ≤ +125oC -1.0 +1.0
µA
VI = GND or VCC
Output Leakage Current
IOZ
VCC = 5.5V,
VO = GND or VCC
1, 2, 3
-55oC ≤ TA ≤ +125oC -1.0 +1.0
µA
Data Retention Supply Current
HM-6508B/883
HM-6508/883
ICCDR
VCC = 2.0V,
E = VCC,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
5
µA
-
10
µA
Operating Supply Current
ICCOP
VCC = 5.5V,
(Note 2),
E = 1MHz,
IO = 0mA,
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
4
mA
Standby Supply Current
ICCSB
VCC = 5.0V,
IO = 0mA,
VI = VCC or GND
1, 2, 3
-55oC ≤ TA ≤ +125oC
-
10
µA
NOTES:
1. All voltages referenced to device GND.
2. Typical derating 1.5mA/MHz increase in ICCOP.
6-71
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