2SK2311(2006) Просмотр технического описания (PDF) - Toshiba

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2SK2311
(Rev.:2006)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut−off current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 60 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 4 V, ID = 12 A

VGS = 10 V, ID = 12 A

VDS = 10 V, ID = 12 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 48 V, VGS = 10 V, ID = 25 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 25 A, VGS = 0 V

IDR = 25 A, VGS = 0 V

dIDR / dt = 50 A / μs

Marking

2SK2311

Min Typ. Max Unit

—

—

±10

μA

—

— 100 μA

60

—

—

V

0.8

—

2.0

V

—

57

80

mΩ

—

36

46

10

16

—

S

— 1000 —

— 200 —

pF

— 550 —

—

20

—

—

30

—

ns

—

55

—

— 130 —

—

38

—

—

25

—

nC

—

13

—

Min Typ. Max Unit

—

—

25

A

—

—

100

A

—

—

−1.8

V

—

50

—

ns

—

35

—

μC

K2311

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-17

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