2SK1761 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK1761

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1761

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

250

Gate to source breakdown

voltage

V(BR)GSS

±30

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

5.0

Typ

—

—

—

—

—

0.23

8.0

Max

—

—

±10

250

3.0

0.35

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

1100 —

440 —

68

—

20

—

65

—

100 —

44

—

1.0

—

200 —

Unit Test Conditions

V

ID = 10 mA, VGS = 0

V

IG = ±100 µA, VDS = 0

µA VGS = ±25 V, VDS = 0

µA VDS = 200 V, VGS = 0

V

ID = 1 mA, VDS = 10 V

Ω

ID = 6 A

VGS = 10 V*1

S

ID = 6 A

VDS = 10 V*1

pF VDS = 10 V

pF VGS = 0

pF f = 1 MHz

ns ID = 6 A

ns VGS = 10 V

ns RL = 5 Ω

ns

V

IF = 12 A, VGS = 0

ns IF = 12 A, VGS = 0,

diF / dt = 100 A / µs

3

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