2SK1761 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK1761

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1761

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

250

V

±30

V

12

A

48

A

12

A

75

W

150

°C

–55 to +150

°C

2

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