TPC8107(2003) Просмотр технического описания (PDF) - Toshiba
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TPC8107 Datasheet PDF : 7 Pages
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RDS (ON) – Ta
30
Common source
Pulse test
20
ID = -13 A, -6.5 A, -3 A
10
VGS = -4 V
ID = -13 A, -6.5 A, -3 A
-10
0
-80
-40
0
40
80
120
160
Ambient temperature Ta (°C)
10000
3000
Capacitance – VDS
Ciss
1000
300
Coss
Crss
Common source
100 VGS = 0 V
f = 1 MHz
Ta = 25°C
30
-0.1 -0.3
-1
-3
-10
-30
Drain-source voltage VDS (V)
-100
TPC8107
-100
-10
IDR – VDS
-5 -3
-10
-1
VGS = 0 V
-1
-0.1
0
Common source
Ta = 25°C
Pulse test
0.2
0.4
0.6
0.8
1.0
1.2
Drain-source voltage VDS (V)
Vth – Ta
-2.0
Common source
VDS = -10 V
-1.6
ID = -1 mA
Pulse test
-1.2
-0.8
-0.4
0
-80
-40
0
40
80
120
160
Ambient temperature Ta (°C)
2.0
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
0.4
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
-30
-30
Common source
VDD = -24 V
ID = -13 A
VDS
Ta = 25°C
Pulse test
-20
-20
-12
-10
-6
0
0
-6
VDD = -24 V -10
-12
VGS
0
40
80
120
160
200
Total gate charge Qg (nC)
5
2003-02-20
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