TPC8107(2003) Просмотр технического описания (PDF) - Toshiba

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TPC8107
(Rev.:2003)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Toshiba 

Thermal Characteristics

Characteristics

Symbol

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Rth (ch-a)

Rth (ch-a)

Max

65.8

125

Unit

°C/W

°C/W

Marking (Note 5)

TPC8107

TPC8107

※

TYPE

Lot No.

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 ´ 25.4 ´ 0.8

(unit: mm)

(a)

(b)

Note 3: VDD = -24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 W, IAR = -13 A

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: · on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

FR-4

25.4 ´ 25.4 ´ 0.8

(unit: mm)

2

2003-02-20

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