30F126 Просмотр технического описания (PDF) - Toshiba

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30F126

30F126 - LCD Plasma common tube TO-220F

Toshiba 

Combination Products of Different Type Devices (5-Pin Packages (UFV, SMV), 6-Pin Packages (ES6, US6, SM6) ) (Continued)

ESV Package ES6 Package

1.6

1.6

Part Number

UFV Package USV Package

2.0

2.0

SMV Package

2.9

SM6 Package

2.9

Ratings

Internal Connections

Component

Devices

Breakdown Current

Voltage

(V)

(mA)

Features

NPN (BRT) + Nch

(mm)

(mm)

R1

Q1

R2

Q2

⎯

NPN + Nch

HN7G09FE

Q1

Q2

⎯

HN7G10FE

PNP + NPN (BRT)

R1 R2

⎯

⎯

Q1

Q2

Common emitter

NPN + NPN (BRT)

Q1

Q2

⎯

⎯

R2

R1

Independent

small-signal diode

+ NPN

Q1

⎯

⎯

Q2

Independent

PNP + small-signal

diode

⎯

⎯

Q1

Q2

(mm)

⎯

⎯

⎯

⎯

⎯

⎯

(mm)

⎯

⎯

(mm)

⎯

⎯

(mm)

NPN

(Internal resisters),

Q1 RN1104F VCEO 50 IC 100

R1 = 47 kΩ,

⎯

R2 = 47 kΩ

2.5-V gate drive

Q2 SSM3K15FS VDS 30 ID 100 (Vth = 1.5 V max),

Ron = 4 Ω typ..

NPN Low VCE(SAT),

Q1 2SC5376F VCEO 12 IC 400 suitable for power

supply switches

⎯

2.5-V gate drive

Q2 SSM3K03FE VDS 20 ID 50 (Vth = 1.3 V max),

Ron = 4 Ω typ.

⎯

⎯

⎯

HN4G01J

⎯

⎯

Q1 2SA2214 VCEO 20 IC 1500 PNP, high-current

HN7G11F

*

NPN

(Internal resisters),

Q2 RN1102 VCEO 100 IC 100

R1 = 10 kΩ,

R2 = 10 kΩ

⎯

HN2E01F

HN2E02F

General-purpose

Q1 2SC4116 VCEO 50 IC 150

NPN transistor

NPN

(Internal resisters),

Q2 RN1303 VCEO 50 IC 100

R1 = 22 kΩ,

R2 = 22 kΩ

Standard high-speed

Q1 1SS352 VR 80 IO 100

switching

Q2 2SC4666 VCEO 50 IC 150 High-hFE-type NPN

Standard high-speed

Q1 1SS352 VR 80 IO 100

switching

General-purpose

Q2 2SC4116 VCEO 50 IC 150

NPN transistor

High breakdown

Q1 2SA1587 VCEO −120 IC −100

voltage PNP

⎯

⎯

HN2E04F

Standard high-speed

Q2 1SS352 VR 80 IO 100

switching

Independent

BRT (PNP) +

small-signal diode

⎯

⎯

⎯

⎯

HN2E05J

Q1

Q2

R1 R2

PNP

(Internal resisters),

Q1 RN2304 VCEO −50 IC −100

R1 = 47 kΩ,

⎯

R2 = 47 kΩ

Standard high-speed

Q2 1SS352 VR 80 IO 100

switching

SBD + PNP (BRT)

Q1

Q2 HN2E07JE

⎯

⎯

⎯

⎯

R1 R2

• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

Schottky barrier

Q1 1SS417 VR 40 IO 100

diodes

⎯

PNP

(Internal resisters),

Q2 RN2104MFV VCEO −50 IC 100

R1 = 47 kΩ,

R2 = 47 kΩ

*: New product

The internal connection diagrams only show the general configurations of the circuits.

19

2010/9　SCE0004K

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