30F126 Просмотр технического описания (PDF) - Toshiba

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30F126

30F126 - LCD Plasma common tube TO-220F

Toshiba 

(Surface-Mount Type) (Electret Condense Microphone)

Characteristics

VGDS (V) IG (mA)

Max

Max

IDSS Rank

(µA)

⎪Yfs⎪(mS) Ciss (pF)

Min

Typ.

VESM

1.2

0.5

(mm)

High gain

Low THD

Low Noise

Small Ciss

A = 80 to 200

−20

10

0.55

3.6

2SK3582MFV

B = 170 to 300

High gain

Low THD

Small Ciss

A = 140 to 240

−20

10

0.9

3.5

2SK3857MFV

B = 210 to 350

A = 140 to 240

High gain

Small Ciss

AK = 100 to 250

−20

10

B = 210 to 350

1.35

4.0

2SK4059MFV

BK = 210 to 400

C = 320 to 500

Very Low Noise

Very Small Ciss

−20

A = 140 to 240

10

0.65

1.8

TTK101MFV *

B = 210 to 350

• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

TESM3

1.4

Package

VESM2

1.2

CST3

0.6

0.395

(mm)

0.3 (max)

0.35

(mm)

0.38

(mm)

2SK3582TK

2SK3582TV

2SK3582CT

2SK3857TK

2SK3857TV

2SK3857CT

2SK4059TK

2SK4059TV

2SK4059CT

TTK101TV *

⎯

⎯

*: New product

Junction FETs (Dual) (Surface-Mount Type)

Classification

VGDS (V)

IG (mA)

IDSS (mA)

⎪Yfs⎪(mS)

Min

SMV

2.9

Package

USV

2.0

♦Internal Connections

Nch x 2

(mm)

Pch x 2

Nch x 2

(mm)

Pch x 2

General-purpose

−50

10

1.2 to 14

4

2SK2145

⎯

2SK3320

⎯

Q1

Q2

• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

♦The internal connection diagrams only show the general configurations of the circuits.

17

2010/9　SCE0004K

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