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L6213

SOLENOID DRIVER + SWITCH MODE POWER SUPPLY

STMicroelectronics 

L6213

ELECTRICAL CHARACTERISTICS (continued)

Pin Symbol

POWER FAIL

Parameter

Test Condition

Min. Typ. Max. Unit

10

VthR Rising Threshold Voltage

10

Vth F

Falling Threshold Voltage

10

∆Vth Threshold Hysteresis

8

IPFI

Divided Internal Current

8

Vth-PFP Rising Threshold Voltage

8

Vth-PFP Falling Threshold Voltage

8 ∆Vth -PFP Threshold Hysteresis

7

Vsat

Output PF Saturation

7

Ileak

Output Leakage Current

7

t1

Delay to Reset

7

t2

Noise Immunity

7

t3

Noise Immunity

RESET

PFP open

Fig. 1

19.5 20

23

V

PFP open

Fig. 1

16.6 18.1 19.5

V

PFP open

Fig. 1

0.5

V

130

µA

VPS = 24V

1.1 1.21 1.29

V

VPS = 24V

0.98 1.06 1.13

V

VPS = 24V

30

mV

PF current = 2.5mA

VPS = 3 to 46V

0.4

V

VPS = 46V VPF = 20V

50

µA

RESET High to PF high

0

Delay Time (fig. 1)

1

µs

When VPS drops to 8V for a

0

time from 0 to t2, PF must be

at 1 logic level (fig. 2)

1

µs

When VPS drops to 17V for

4

µs

a time greater than t3, PF

must be at 0 logic level (fig. 2)

9

Id

Delay Source Current

9

Id

Delay Sink Current

13

Vsat

Output RESET Saturation

13

Ileak

Output Leakage Current

13

t4

Noise Immunity

SOLENOID CONTROL SECTION

VD = 0 to 4.1V

70

VD = 4.3 to 2V

10

RESET Current = 2.5mA

VPS = 3 to 46V

VPS = 46V RD = 4 to 5V

VRESET = 20V

When VPS drops to 10V for a

4

time greater than t4 RESET

must be at 0 logic level (fig. 1)

140

µA

mA

0.4

V

50

µA

µs

18 Vsat Saturation Voltage

ENABLE = 1 I PIM = 5mA

0.2

V

18

Ileak

Leakage Current

PIM = 0.2 to 2.5V ENABLE = 0

+100 µA

18 Vclamp Clamp Voltage

1.9

2

2.1

V

17

Minimum Offset Threshold

PIM = GND Vsens = 10mV

lower MOS must be in conduction

ENABLE = 0

17

MAximum Offset Voltage

PIM = GND Vsens = 50mV

lower MOS must be open

ENABLE = 0

17 Vsense Static Voltage Limiting

Threshold

Vsens going from 0 to 0.6V

0.475 0.5 0.525 V

PIM = 3V, the EMH DMOS

goes to high resistance state

when Vsens is within: (see

Block Diagram)

17

Maximum Delay Time

1

µs

tp

Protection Time

2

4

µs

EMH Ron OnStateDrain toSource Resistance Tj = 25°C, VPS 15 to 46V

0.35 0.45

Ω

EML Ron OnStateDrain to SourceResistance Tj = 25°C, VPS 15 to 46V

0.28 0.4

Ω

17 Vsense Vsense Hysteresis

IST = Open

IST = 0.75V

IST = 3V

35

50

65

mV

15

25

35

mV

80

100 120 mV

5/9

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