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L6353

SMART DRIVER FOR POWER MOS & IGBT

STMicroelectronics 

L6353

with

VCLA MP_PROG

=

VCL

6

7V < VCL <11V

Leaving the CLAMP_PROG pin floating the VCL

level is set to 9V. If the pin is grounded the func-

tion is inhibited (i.e. no intermediate step during

the firing).

Third step

Parameter: VONth

At the end of the tMON_DELAY the gate of the

driven device is pulled toward the VPOS level in

order to ensure an appropriate drive to minimize

the power losses. The external power device is

considered in overload whenever the voltage on

its output, sensed via the VON_SENSE pin, is above

VONth. The comparison value is programmable

setting at a certain level, by means of a resistive

divider, the ON_LEV_PROG pin according to the

following formula:

with

VON_LEV_PROG = VONth. 0.17

5V < VONth. < 15V

and

VONth. < VCC -1V.

If the ON_LEV_PROG pin is left floating theVONth.

Undervoltage Comparator Hysteresis

level is set to 7.5V.

The overload status is signalled via the ALARM

pin, active LOW. To inhibite the VON Monitor func-

tion, the VSENSE pins must be grounded.

THERMAL PROCEDURE

As the junction temperature raises, two different

events will take place. When the Over Tempera-

ture Threshold (Tth1), set at 130°C is reached, the

ALARM output is activated (low level). If the tem-

perature keeps on raising, up to the Over Tem-

peratur Shutdown (Tth2 = 160°C Typ) the output

power device is turned off until the temperature

decrease. To prevent an oscillating behaviour

both the thresholds have a built-in hysteresis of

20°C.

UNDERVOLTAGE LOCK OUT

To avoid operation with non optimal drive of the

external power device, an Undervoltage Lockout

function is implemented. The OUT1 pin is forced

close to VSS until the VCC supply voltage has

reached the Undervoltage Upper Threshold

(VCCth2) value. If the supply voltage falls below

the lower hysteresis value (i.e. VCCth1 - VCChys)

the OUT1 will be again forced close to VSS. The

built-in hysteresis will thus avoid intermittent func-

tioning of the device at low supply voltage that

may have a superimposed ripple.

Vcchys

Vccth D94IN126B

Vs

8/11

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