MOC223-M(2006) Просмотр технического описания (PDF) - Fairchild Semiconductor
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MOC223-M Datasheet PDF : 9 Pages
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Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.* Max. Unit
EMITTER
VF Input Forward Voltage
IR
Reverse Leakage Current
CIN Input Capacitance
DETECTOR
IF = 1.0mA
VR = 6.0V
1.08 1.3
V
0.001 100
µA
18
pF
ICEO1
ICEO2
BVCEO
Collector-Emitter Dark Current
Collector-Emitter Breakdown
Voltage
VCE = 5.0 V, TA = 25°C
VCE = 5.0 V, TA = 100°C
IC = 100µA
1.0 50
nA
10
µA
30 100
V
BVECO Emitter-Collector Breakdown
Voltage
IE = 100µA
7.0 10
V
CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0
5.5
pF
COUPLED
CTR
VISO
RISO
Current Transfer Ratio(3)
Isolation Surge Voltage(1,2)
Isolation Resistance(2)
IF = 1.0mA, VCE = 5.0V
f = 60Hz AC Peak, t = 1 min.
V = 500V
500
2500
1011
1000
%
Vac(rms)
Ω
VCE (sat) Collector-Emitter Saturation
Voltage
IC = 500µA, IF = 1.0mA
1.0
V
CISO Isolation Capacitance(2)
VI-O = 0V, f = 1MHz
0.2
pF
ton
Turn-On Time
IF = 5.0mA, VCC = 10V, RL = 100Ω
10
µs
(Fig. 6)
toff
Turn-Off Time
IF = 5.0mA, VCC = 10V, RL = 100Ω
125
ns
(Fig. 6)
tr
Rise Time
IF = 5.0mA, VCC = 10V, RL = 100Ω
8
µs
(Fig. 6)
tf
Fall Time
IF = 5.0mA, VCC = 10V, RL = 100Ω
110
µs
(Fig. 6)
*All typicals at TA = 25°C
Notes:
1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating.
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. Current Transfer Ratio (CTR) = IC / IF x 100%.
3
MOC223-M Rev. 1.0.0
www.fairchildsemi.com
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