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MOC223-M(2006) Просмотр технического описания (PDF) - Fairchild Semiconductor

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MOC223-M
(Rev.:2006)
Fairchild
Fairchild Semiconductor Fairchild
MOC223-M Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MOC223-M
Small Outline Optocouplers Darlington Output
October 2006
Features
U.L. Recognized (File #E90700, Volume 2)
VDE Recognized (File #136616) (add option “V” for
VDE approval, i.e, MOC223V-M)
Industry Standard SOIC-8 Surface Mountable
Package with 0.050" lead spacing
High Current Transfer Ratio of 500% Minimum at
IF = 1mA
Standard SOIC-8 Footprint, with 0.050" Lead Spacing
Compatible with Dual Wave, Vapor Phase and IR
Reflow Soldering
High Input-Output Isolation Voltage of 2500 VAC(rms)
Guaranteed
Applications
Low power logic circuits
Interfacing and coupling systems of different
potentials and impedances
Telecommunications equipment
Portable electronics
Solid state relays
Description
The MOC223-M consists of a gallium arsenide infrared
emitting diode optically coupled to a monolithic silicon
photodarlington detector, in a surface mountable, small
outline, plastic package. It is ideally suited for high
density applications, and eliminates the need for through
the board mounting.
ANODE 1
CATHODE 2
N/C 3
N/C 4
8 N/C
7 BASE
6 COLLECTOR
5 EMITTER
©2003 Fairchild Semiconductor Corporation
1
MOC223-M Rev. 1.0.0
www.fairchildsemi.com

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