SP6642EU Просмотр технического описания (PDF) - Signal Processing Technologies
Номер в каталоге
Компоненты Описание
Список матч
SP6642EU Datasheet PDF : 16 Pages
| |||
SPECIFICATIONS (continued)
VBATT = VSHDN = 1.3V, ILOAD = 0mA, FB = GND, TAMB = -40OC to +85OC, and typical values are at TAMB = +25OC unless otherwise noted.
PARAMETER
MIN. TYP. MAX. UNITS
CONDITIONS
Quiescent Current into V , I
OUT QOUT
Quiescent Current into VBATT, IQBATT
Shutdown Current into VOUT, ISHDNOUT
Shutdown Current into VBATT, ISHDNBATT
Low Output Voltage for PFO and BATTLO, VOL
Leakage Current for PFO and BATTLO
BATTLO Trip Voltage
On-Time Constant, K
Off-Time Tracking Ratio (NOTE 3)
Efficiency
13
1.5
0.001
0.005
0.96 1.0
17 25
1
83
20
2.5
0.5
0.1
0.4
1
1.04
35
1.5
µA
µA
µA
µA
V
µA
V
V-µs
%
V =3.5V
OUT
VBATT=1.0V
VOUT=3.5V for the SP6642
VBATT=1.0V for the SP6642
VPFI=0V,VOUT=+3.3V,ISINK=1mA
VPFI=650mV,VPFO=6V
VOUT=+3.3V,hysteresis=2% for the SP6643
0.9V<VBATT<1.5V (tON=K/VBATT)
0.9V<VBATT<1.5V,VOUT=+3.3V
ILOAD=20mA
NOTE 1: The reverse battery current is measured from the Typical Operating Circuit's input terminal to GND
when the battery is connected backward. A reverse current of 220mA will not exceed package dissipation limits
but, if left for an extended time (more than 10 minutes), may degrade performance.
NOTE 2: Start-up guaranteed by correlation to measurements of device parameters (i.e. switch on-resistance,
on-times, and output voltage trip points.
NOTE 3: tOFF = Ratio x
tON x VBATT
VOUT - VBATT
. This guarantees discontinous condition.
NOTE 4: Specifications to -40ºC are guaranteed by design, not production tested.
Rev. 10-6-00
SP6642/6643 High Efficiency Step-Up DC-DC Converter
3
© Copyright 2000 Sipex Corporation
Share Link: 