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BF998R Просмотр технического описания (PDF) - NXP Semiconductors.

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BF998R
NXP
NXP Semiconductors. NXP
BF998R Datasheet PDF : 15 Pages
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NXP Semiconductors
Silicon N-channel dual-gate MOS-FETs
Product specification
BF998; BF998R
10
y is
(mS)
1
MGC466
b is
10 1
10 2
10
g is
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C.
Fig.13 Input admittance as a function of the
frequency; typical values.
10 3
y rs
(μS)
10 2
10
MGC467
10 3
ϕ rs
(deg)
ϕ rs
10 2
y rs
10
1
10
1
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C.
Fig.14 Reverse transfer admittance and phase as a
function of frequency; typical values.
10 2
y fs
(mS)
10
MGC468
10 2
ϕ fs
y fs
(deg)
ϕfs
10
10
yos
(mS)
1
10 1
MGC469
bos
gos
1
10
102
f (MHz)
1
10 3
10 2
10
102
f (MHz)
10 3
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C.
Fig.15 Forward transfer admittance and phase as a
function of frequency; typical values.
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 C.
Fig.16 Output admittance as a function of the
frequency; typical values.
1996 Aug 01
7
 

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